According to foreign media reports, a research team led by Professor Zhou Shengjun of Wuhan University developed a high-efficiency GaN-based green LED on a sapphire substrate. The research team proposes to use a hybrid nucleation layer (Hybrid Nucleation Layer) composed of sputtered AIN (Sputtered AlN) and mid-temperature GaN devices to improve the quantum efficiency of GaN-based green LEDs.
Currently, the development of high-efficiency III-nitride emitters in the full visible range is highly attractive, and the fusion of multiple color III-nitride emitters enables efficient and precise hybrid spectral management, resulting in high-resolution displays and various smart lighting applications, but the main obstacle at present is the poor efficiency of III-nitride emitters in the green to tan spectral region.
To this end, researchers at Wuhan University used a new hybrid nucleation layer to fabricate high-efficiency InGaN/GaN green LEDs on sapphire substrates. During the production process, the mixed nucleation layer and the GaN surface will generate a Stacking Fault Structure, which helps to achieve Misfit Stress Compensation.
Benefiting from the initial thermal mismatch stress relaxation, the Disloaction Density and Residual Stress in green LEDs are reduced. As a result, the research team improved the efficiency by about 16 percent during mass production.
The Wuhan University research team said that the application prospect of the hybrid nucleation layer is very promising for realizing high-efficiency III-nitride emitters in the green to yellow-brown region.
